Product Summary

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies

Parametrics

FQP8N90C Datasheet (PDF) - Fairchild Semiconductor - 900V N-Channel MOSFET

Features

6.3A, 900V, RDS(on) = 1.9? @VGS = 10 V

? Low gate charge ( typical 35 nC)
? Low Crss ( typical 12 pF)
? Fast switching
? 100% avalanche tested
? Improved dv/dt capability

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FQP8N90C
FQP8N90C
Fairchild Semiconductor
MOSFET 900V N-Ch Q-FET advance C-Series
Data Sheet
0-580: $0.62
580-1000: $0.52
1000-2000: $0.48
2000-5000: $0.47
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FQP85N06
FQP85N06
Fairchild Semiconductor
MOSFET 60V N-Channel QFET
Data Sheet
0-1: $1.49
1-25: $1.33
25-100: $1.20
100-250: $1.07
FQP8N25
FQP8N25
Other

Data Sheet
Negotiable 
FQP8N60C
FQP8N60C
Fairchild Semiconductor
MOSFET 600V N-Ch Q-FET advance C-Series
Data Sheet
0-1: $0.87
1-25: $0.77
25-100: $0.62
100-250: $0.54
FQP8N60C_Q
FQP8N60C_Q
Fairchild Semiconductor
MOSFET 600V N-Ch Q-FET advance C-Series
Data Sheet
Negotiable 
FQP8N80C
FQP8N80C
Fairchild Semiconductor
MOSFET 800V N-Ch Q-FET advance C-Series
Data Sheet
0-1: $1.09
1-25: $0.88
25-100: $0.79
100-250: $0.70
FQP8N90C
FQP8N90C
Fairchild Semiconductor
MOSFET 900V N-Ch Q-FET advance C-Series
Data Sheet
0-580: $0.62
580-1000: $0.52
1000-2000: $0.48
2000-5000: $0.47